Hollow microprobe using a MEMS technique and a method of manufacturing the same

ABSTRACT

The present invention relates to a hollow microprobe using an MEMS technique and a method of manufacturing the same. A method of manufacturing a hollow microprobe using an MEMS technique according to the present invention comprises: a step of forming a protection film pattern on a substrate; a step of forming a through hole on the substrate using the protection film pattern as a mask; a step of forming a seed layer on the upper portion of the protection film pattern of the substrate provided with the through hole and an inside wall of the through hole; a step of removing the seed layer of the upper portion of the substrate and the protection film to remain the seed layer only in the inside surface of the though hole, a step of forming a buried conductor within the through of the substrate by an electroplating method; a step of planarizing the top surface of the substrate provided with the buried conductor; a step of forming a base conductive film on the substrate which its top surface is planarized; a step of forming a first tip supporter on the substrate provided with the base conductive film and having a oblique surface sloping down; a step of rounding the top surface of the first tip supporter; a step of forming a second tip supporter; a step of forming a second tip supporter on the outside surface of the first tip supporter to open the top surface of the first tip supporter; a step of forming a conductive material tip on the outside surface of the second tip supporter; and a step of removing the top surface of the opened first tip supporter with a predetermined depth.

This application is a National Stage application under 35 U.S.C. §371 ofand claims the benefit of International Application No.PCT/KR2003/001414, filed on Jul. 16, 2003, published in the Englishlanguage on Apr. 8, 2004 as International Publication Number WO2004/030080 A1, which claims priority to Korean Application No.10-2002-0058021 filed on Sep. 25, 2002, all of which are herebyincorporated by reference.

TECHNICAL FIELD

The present invention relates to a hollow microprobe using an MEMStechnique and a method of manufacturing the hollow microprobe, and morespecifically to a hollow microprobe using an MEMS technique and a methodof manufacturing the hollow microprobe, in which the microprobe forelectrically testing a semiconductor chip can be manufactured using theMEMS technique. Description of the Prior Art

BACKGROUND ART

Generally, in semiconductor manufacturing processes, afterwafer-manufacturing processes are finished, non-defective products areselected through a probing test and received in packages, therebycompleting final products.

Next, a burn-in process is carried out to a semiconductor devicepackaged as the final product.

In such a probing test, predetermined electrical signals are appliedfrom a tester through probes of a probe card contacted with electrodepads of a chip formed on a semiconductor substrate, and then theelectrical signals responding to the applied electrical signals arereceived again by the tester, so that it is checked whether the chipformed on the semiconductor substrate is normal or not.

As described above, the probe card for testing the completed wafer, thatis, a semiconductor chip comprises, as shown in FIG. 1, a printedcircuit board 110 provided with circuits, a reinforcement plate 112formed at a center of a top surface of the printed circuit board 110, aprobes 114′ contacted to the electrode pads of the wafer not shown,needles 14 connected to the circuits of the printed circuit board 110, afixing plate 116 formed at a center of a bottom surface of the printedcircuit board 110 to hold the probes 114′, and fixing members 118 forfixing the probes 114′ to the fixing plate 116.

At that time, a defined portion of the probe 114′ is bent downwardly,that is, toward the electrode pad by a predetermined angle.

The probes 114′ are contacted with central portions of the electrodepads with the probe card moving up down by mean of a jig not shown, sothat it is checked whether the electrode pads are normal or not.

However, since the probes provided in the conventional probe card are aneedle type and the defined portions of the probes are bent downwardly,that is toward the electrode pads by a predetermined angle, it is noteasy to cope with the highly integrated semiconductor elements.

In other words, since the defined portion of the probes provided in theaforementioned probe card are bent downwardly, that is, toward theelectrode pads by the predetermined angle, it is not possible to arrangethe probes on the fixing plate of the probe card with high density, sothat it is not possible to cope with the highly integrated semiconductorelements.

Further, since the needle type probes can slide on ball-type electrodepads widely used in recent years, that is, the ball-type electrode padsof which top surfaces are protruded upwardly, it is not easy for theneedle type probes to be in contact with the ball-type electrode pads.

In addition, since the needle-type probes are formed through processessuch as cutting and grinding of needles by means of manual works, thereare problems that mass-production thereof is limited and difference incharacteristics of the completed probes is generated depending uponproficiencies of workers.

It is an object of the present invention to provide a hollow microprobeusing an MEMS technique and a method of manufacturing the hollowmicroprobe, the hollow microprobe being vertically fixed to cope with afine pitch of a highly integrated semiconductor element.

It is another object of the present invention to provide a hollowmicroprobe using an MEMS technique and a method of manufacturing thehollow microprobe, in which the microprobe can be easily in contact witha ball-type electrode pad.

It is still another object of the present invention to provide a hollowmicroprobe using an MEMS technique and a method of manufacturing thehollow microprobe, suitable for mass-producing reproducible products.

DISCLOSURE OF INVENTION

In order to accomplish the above objects of the present invention, amethod of manufacturing a hollow microprobe using an MEMS techniqueaccording to the present invention comprises: a step of forming aprotection film pattern on a substrate; a step of forming a through holeon the substrate using the protection film pattern as a mask; a step offorming a seed layer on the upper portion of the protection film patternof the substrate provided with the through hole and an inside wall ofthe through hole; a step of removing the seed layer of the upper portionof the substrate and the protection film to remain the seed layer onlyin the inside surface of the though hole, a step of forming a buriedconductor within the through of the substrate by an electroplatingmethod; a step of planarizing the top surface of the substrate providedwith the buried conductor; a step of forming a base conductive film onthe substrate which its top surface is planarized; a step of forming afirst tip supporter on the substrate provided with the base conductivefilm and having a oblique surface sloping down; a step of rounding thetop surface of the first tip supporter; a step of forming a second tipsupporter on the outside surface of the first tip supporter to open thetop surface of the first tip supporter; a step of forming a conductivematerial tip on the outside surface of the second tip supporter; and astep of removing the top surface of the opened first tip supporter witha predetermined depth.

Now, the steps of the method for manufacturing a hollow microprobe usingan Micro electro-mechanical systems (MEMS) technique according to thepresent invention will be described.

(1) Step of forming the protection film pattern

In this step, the protection film pattern is formed on the substrate.Specifically, the protection film made of photo-resist with apredetermined thickness is formed on the top surface of the substrate,and the protection film is exposed and developed, thereby forming theprotective film pattern. At that time, it is preferable that thesubstrate is 500 μm thick, and the photo-resist is 10±2 μm thick.

(2) Step of forming the through hole

In this step, the through hole is formed in the substrate using a laserprocess or a reactive ion etching (RIE) process. In the laser process, alaser beam is applied to the substrate to punch the substrate, and inRIE process, the substrate is dry-etched using the protection filmpattern to form the through hole.

When the laser process is used, there is an advantage that the step offorming the protection film pattern is not needed, but there is adisadvantage that the individual step is required every through hole andthus the processing time is increased. Furthermore, when the RIE processis used, there is a disadvantage that the protection film pattern isformed using the photo-resist, but there is an advantage that aplurality of through holes are formed at one time.

Accordingly, when the number of the through holes to be formed isrelatively small, it is effective to use the laser process, but when thenumber of the through holes is relatively large, it is effective to usethe RIE process.

(3) Step of forming the seed layer

In this step, the seed layer is formed on a top surface of thesubstrate, and specifically is formed by depositing chrome (Cr) orcopper (Cu) using a sputtering process.

(4) Step of removing the seed layer and the protection film

In this step, the seed layer and the protection film pattern being onthe top surface of the substrate are removed using a wet etchingprocess. Through this process, the seed layer remains only within thethrough hole formed in the substrate, and the seed layer and theprotection film pattern except the through hole are removed.

However, if the laser process is used in the step of forming the throughhole, the photo-resist pattern is not required, and as a result, thestep of removing the photo-resist pattern is not required.

(5) Step of forming the buried conductor

In this step, the buried conductor is formed within the through holeprovided in the substrate. Specifically, the buried conductor is formedwithin the through hole through the electroplate process using the seedlayer as a seed for the electroplating. The buried conductor is made ofnickel (Ni).

Furthermore, the step of forming the buried conductor can be carried outusing an electroplating pad in addition to the seed layer. In otherwords, the electroplating process is performed after the electroplatingpad is attached to one surface of the substrate, and the electroplateprocess is completed, and the electroplating pad is removed. At thattime, the electroplating pad is attached to the substrate using a jig.

When the electroplating pad is used, since the seed layer formed toperform the electroplating process is not required. The step of formingthe seed layer and the step of removing the seed layer on the substrateare not required.

(6) Step of planarizing a surface of the substrate

In this step, the top surface of the substrate is planarized.Specifically, the buried conductor excessively formed up to the upperportion of the through hole in the step of forming the buried conductoris removed to planarize the top surface of the substrate.

In addition, when buried conductor is formed using the electroplatingpad, both of the top surface and the bottom surface of the substrateshould be planarized.

(7) Step of forming the conductive film

In this step, the conductive film is formed on the top surface of thesubstrate. Specifically, a base conductive film made of a conductivematerial is formed on the top surface of the substrate. At that time, amaterial such as Al is used as the conductive material, the conductivematerial being formed using a deposition process.

In addition, since the conductive film can be made of any metalexcellent in electrical characteristics, various metals can be used forthe conductive film. However, if the metal to be used is replaced withother metal, the deposit condition is changed.

(8) Step of forming the first tip supporter

In this step, the first tip supporter of a truncated cone shape havingan oblique surface sloping down is formed on the substrate provided withthe base conductive film.

Specifically, the substrate is coated with the photo-resist having apredetermined thickness, and then the photo-resist is exposed by meansof a three dimensional mirror reflected parallel beam illuminator anddeveloped, so that the first tip supporter is formed.

(9) Step of rounding the first tip supporter

In this step, a part of the top surface of the first tip supporter isrounded. Specifically, angled parts of the top surface of the first tipsupporter are removed by use of an ashing process using O₂ gas to form acurved surface.

(10) Step of forming the second tip supporter

In this step, the second tip supporter is formed in the outer surface ofthe first tip supporter. Specifically, a nitride film is formed on thetop surface of the substrate provided with the first tip supporter, andthen the photolithography process is carried out to the nitride film toopen the top surface of the first tip supporter to form the second tipsupporter.

When the second tip supporter has a thickness of several thousands Å,this step can be performed using a plasma enhanced chemical vapordeposition (PECVD) process. However, when the second tip supporter has athickness of severak μm unit, this step can be performed using a lowpressure chemical vapor deposition (LPCVD) process.

(11) Step of forming the tip

In this step, the tip made of a conductive material is formed on anouter surface of the second tip supporter. Specifically, the conductivefilm is formed on the substrate provided with the second tip supporter,and then the photolithography process is carried out to the conductivefilm to form the tip. At that time, the tip is formed to open the topsurface of the second tip supporter, similarly to the second tipsupporter.

The conductive film for forming the tip is made of any one of Cr, Ni andW, and the conductive film is formed using an LPCVD process or the like.

(12) Step of removing a part of the first tip supporter

In this step, the top surface of the exposed first tip supporter isremoved by a predetermined depth. Specifically, this step is carried outby use of the ashing process using O₂ gas.

In addition, the hollow microprobe using the MEMS technique according tothe present invention, comprises: a substrate in which a through holehaving a predetermined size is formed on a defined portion thereof; aburied conductor being filling in the through hole; a base conductivefilm formed on the substrate in which the through hole is filled withthe buried conductor; a first tip supporter formed on the conductivefilm, having a oblique surface sloping down, its top surface beingrounded into a curve surface; a second tip supporter being formed on anouter surface of the first tip supporter, allowing the top surface ofthe first tip supporter to be opened and being protruded from the top ofthe first tip supporter; and a tip made of conductive materials having ashape capable of opening the upper portion of the first tip.

Now, the components of the hollow microprobe using the MEMS techniquewill be described in detail.

First, the buried conductor 18 is made of nickel (Ni).

Furthermore, the first tip supporter 22 is formed on the substrateprovided with the base conductive film, into a shape of a truncated conehaving an oblique surface sloping down. The first tip supporter 22 ismad of photo-resist or the like. However, the first tip supporter has aslow-curved surface by removing an upper portion of the truncated coneusing the ashing process.

Furthermore, the second tip supporter 24 is formed on the substrate tobe attached to an outer surface of the first tip supporter. At thattime, the second tip supporter is made f a nitride film, and the topsurface of the second tip supporter is opened to expose the top surfaceof the first tip supporter.

Furthermore, the tip 26 is formed on the substrate to be attached to theouter surface of the second tip supporter. The tip is formed to have athickness more than that of the second tip supporter. The top surface ofthe tip is also opened so that the top surface of the first tipsupporter exposed by the second tip supporter is exposed. At that time,the tip is made of any one of Cr, Ni, and W.

BRIEF DESCRIPTION OF THE DRAWINGS

Now, the preferred embodiments will be described in details withreference to the accompanying drawings in which:

FIG. 1 is a cross-sectional view illustrating a probe card havingconventional probe;

FIGS. 2A to 2K are cross-sectional views illustrating processes of amethod of manufacturing a hollow microprobe using an MEMS techniqueaccording to an embodiment of the present invention;

FIGS. 3A and 3B are cross-sectional views illustrating a contact statebetween the hollow microprobe according to the embodiment of the presentinvention and a plane type electrode pad;

FIGS. 4 a and 4 b are cross-sectional views illustrating a contact statebetween the hollow microprobe using the MEMS technique according to theembodiment of the present invention and a ball type electrode pad.

FIG. 5 is a cross-sectional view showing an electroplating pad attachedto one surface of a substrate using a jig.

BEST MODE FOR CARRYING OUT THE INVENTION

Now, preferred embodiments of the present invention will be described indetail with reference to the appended drawings.

FIGS. 2A to 2K are cross-sectional views illustrating a method ofmanufacturing the hollow microprobe using the MEMS technique accordingto one embodiment of the present invention.

In order to manufacture the hollow microprobe using the MEMS techniqueaccording to the present invention, first, a protection film pattern 12is formed on a substrate 10 made of silicon or glass as shown in FIG.2A.

At that time, a protection film pattern 12 is made of photo-resistexcellent in a photosensitivity to light, and the protection filmpattern 12 made of photo-resist is formed by coating the photo-resist onthe whole surface of the substrate 10 using a spin-coating process,exposing the coated photo-resist to the light, and developing theexposed photo-resist.

At that time, it is preferable that the substrate has a thickness ofabout 500 μm and the photo-resist is formed to have a thickness of 10μm. Since a selective etching ratio of the substrate to the photo-resistmask is 70:1 in a process using a deep RIE apparatus, if a wafer of 500μm thickness is used, the photo-resist having a thickness from about 7μm to about 8 μm is required, but if it is considered that the cornerportion of the pattern is eroded and removed, it is suitable that thephoto-resist has a thickness of 10 μm.

Next, a through hole 14 is formed in the predetermined portion of thesubstrate using a reactive ion etching (RIE) process or a laser process.In the RIE process, a deionized reaction gas is inter-reacted with thesubstrate 10 to etch the predetermined portion in which the protectionfilm pattern on the substrate is removed using the protection filmpattern 12 formed on the substrate 10 as a mask as shown in FIG. 2B. Inthe laser process, the laser beam is applied to the substrate 10.

At that time, when the through hole 14 is formed using a laser process,there is no need for the photo-resist pattern. Therefore, the step offorming the photo-resist and the step of removing the photo-resist canbe omitted.

Then, as shown in FIG. 2C, a seed layer 16 made of chrome (Cr) is formedon the top surface of the protection film pattern 12 on the substrate 10provided with the through hole 14 and on the inner wall of the throughhole 14 by performing a sputtering process. Furthermore, the seed layermade of copper (Cu) may be formed.

At that time, the seed layer 16 performs a function of allowing aelectroplating film to be effectively deposited in the subsequentelectroplating process.

Next, as shown in FIG. 2D, the seed layer 16 and the protection filmpattern 12 on the substrate 10 are removed.

At that time, the seed layer 16 and the protection film pattern 12 areremoved by a wet etching process using chemicals.

In other words, the top surface of the substrate provided with the seedlayer 16 and the protection film pattern 12 are dipped in the bathfilled with the predetermined chemicals so that the protection filmpattern 12 and the seed layer 16 on the protection film pattern 12 areconcurrently removed. As a result, the seed layer 16 remains only in thethrough hole 14.

Next, as shown in FIG. 2E, the through hole 14 formed on the substrate10 is buried with the buried conductor 18 made of Ni, using the seedlayer by means of the electro plating process, and the Ni film having apredetermined thickness is formed on the top surface of the substrate.

In addition, the step of forming the conductor can be also performedusing an electroplating pad without using the seed layer. In otherwords, as shown in FIG. 5, the electroplating pad 50 is attached to onesurface of the substrate 10 using a jig 55, and then the electroplatingprocess is carried out thereto. Furthermore, if the electroplatingprocess is completed, the electroplating pad 50 is removed from thesubstrate.

However, when using the electroplating pad, after the electroplatingprocess is completed, a planarization process is carried out to bothsurfaces of the substrate 10.

The planarization process such as a chemical mechanical polishing (CMP)process is carried out to the top surface of the substrate 10 providedwith the Ni film, so that the buried conductor 18 made of Ni remainsonly within the through hole 14 formed in the substrate 10. Theremaining buried conductor excessively formed is removed to planarizethe substrate 10.

Next, as shown in FIG. 2F, the base conductive film 20 made of theconductive material such as Cr, Ni, and Al excellent in electricalcharacteristics is formed on the substrate 10 which is buried with theburied conductor 18 made of Ni.

At that time, the base conductive film 20 is formed using a physicalvapor deposition process such as a sputtering process or the like.However, if the metal to be deposited is replaced with other metal, thedepositing condition should be changed. In the aforementioned depositionprocess, Ar gas is used, and the work pressure during the process ispreferably 2 mtorr.

Next, as shown in FIG. 2G, the photo-resist having a predeterminedthickness is coated on the substrate 10 provided with the baseconductive film. Then, the photo-resist is exposed by means of the threedimensional mirror reflected parallel beam illuminator (MRPBI) anddeveloped, so that a truncated cone shaped photo-resist pattern havingan oblique surface sloping down, that is, the first tip supporter 22 isformed.

In other words, when the photo-resist is exposed by means of the threedimensional MRPBI, the photo-resist is exposed obliquely to form thefirst tip supporter. In order to form the slope of 20 degree, thephoto-resist should be exposed obliquely by 35 degree.

In this case, the three dimensional MRPBI is disclosed in the KoreanPatent Application number 2001-35359, entitled “A very-slow slope-turnexposure” and assigned to Korea Advanced Institute of Science andTechnology (KAIST). when using the three dimensional MRPBI, thephoto-resist pattern having the oblique surface sloping down can beformed. In other words, the first tip supporter 22 is formed by allowingthe substrate to be obliquely placed on a stage by the predeterminedsloped angle, and then applying obliquely the ultra violet ray to thephoto-resist while turning the stage to expose the photo-resist. Next,the exposed photo-resist is developed by means of a developer.

Next, as shown in FIG. 2H, the angled portion of the top surface of thefirst tip supporter 22 having the truncated cone shape is rounded into acurved surface through the ashing process.

At that time, in the ashing process, O₂ gas is ionized into a plasmastate, the oxygen ion in the plasma state is allowed to react to the topsurface of the first tip supporter 22, so that the angled portion of thetop surface of the first tip supporter 22 is eroded and rounded. In thecondition of the ashing process, it is preferable that oxygen (O₂) of200 sccm is supplied and the pressure is 200 Pa.

Next, as shown in FIG. 2I, a nitride film 24 made of nitride (Si₃N₄) isformed on the substrate 10 processed through the ashing process and theouter portion of the first tip supporter 22. Then, a predeterminedportion of the nitride film 24 is removed by means of the conventionalphotolithography process so that the rounded portion of the first tipsupporter 22 is exposed whereby the nitride film pattern provided withan opening, that is, the second tip supporter 24 is formed.

In other words, for the second tip supporter 24, the photo-resist iscoated over the whole nitride film formed on the outer surface of thefirst tip supporter 22 of which the top surface is rounded, and isexposed and developed to form the photo-resist pattern. Then, using thephoto-resist pattern as a mask, its under film, that is, the nitridefilm 24 is etched through the reactive ion etching (RIE) process, sothat the second tip supporter 24 is completed.

At that time, as a method of forming the nitride film 24, when thenitride film has a thickness of several thousands Å, it is preferablethat the PECVD process is used, but when the nitride film has athickness of several μm, it is preferable that the LPCVD process isused. In this embodiment, the nitride film has a thickness of about 1 to20 μm. Furthermore, the nitride film may be formed through anelectroplating process.

Next, as shown in FIG. 2J, a metal film made of Cr or Ni is formed bymeans of the sputtering process on the substrate 10 on witch the secondtip supporter 24 is formed through the RIE process, or a metal film madeof tungsten (W) is formed by means of a metal organic chemical vapordeposition (MOCVD), and then the metal film pattern, that is, a tip 26is formed on the outer surface of the second tip supporter 24 by meansof the conventional photolithography process.

In other words, first, the metal film is formed, the photo-resist iscoated over the whole outer surface of the metal film and then thephoto-resist is exposed and developed to form the photo-resist pattern,and its under film, that is, the metal film 26 is etched by the RIEmethod using the photo-resist pattern as a mask to form the tip 26. Atthat time, the metal has a thickness of from about 10 μm to about 30 μm.As a metal film forming method, the electroplating process or thedeposition process is available.

Finally, as shown in FIG. 2K, a part of top surface of the first tipsupporter is removed by the ashing process.

In other words, in this embodiment, the nitride film pattern, which isthe photo-resist under the second tip supporter 24, that is, the firsttip supporter 22 is etched and removed by a predetermined depth. If theetching process is completed, the hollow probe according to the presentinvention is completed.

Now, a method of using the hollow probe according to the presentinvention will be described. FIGS. 3A, 3B, 4A, and 4B arecross-sectional views showing a method of using the hollow probeaccording to the present invention.

First, as shown in FIG. 3A, when the hollow probe according to thepresent invention moves from up to down on the substrate 40 which aplane type electrode pad 30 is provided on by the predetermined physicalforce F, the hollow probe according to the present invention allows theconductive tip 26 supported by the first tip supporter 22 and the secondtip supporter 24 to slightly shrink, and then as shown in FIG. 3B, thetip penetrates the thin oxide film 32 formed on the surface of theelectrode pad 30 to come in contact with the plane type electrode pad30.

At that time, the first tip supporter 22 performs a function ofpreventing the portions corresponding to each other in the tip 26 fromcontacting each other due to the excessive shrink of the tip 26, and thesecond tip supporter 24 performs a function of supporting the tip 26.

In addition, as shown in FIG. 4A, when the substrate 40 provided withthe ball type electrode pad 30 of which the top surface is curved movesfrom up to down by the predetermined physical force F, theaforementioned hollow probe according to the present invention allowsthe conductive tip 26 supported by the first tip supporter 22 and thesecond tip supporter to slightly shrink, and then as shown in FIG. 4 b,the conductive tip penetrates the thin oxide film 32 formed on thesurface of the electrode pad 30 to come in contact with the ball typeelectrode pad 30.

At that time, the tip 26 of the hollow probe according to the presentinvention is contacted with the electrode pad 30 in the form ofsurrounding the ball type electrode pad 30, so that the tip 26 isprevented from sliding on the top surface of the ball type electrode pad30.

Specifically, since the hollow probe according to the present inventioncan be vertically attached to the space expander or the like, the hollowprobe can cope with the fine pitch of the highly integratedsemiconductor element.

Since the hollow microprobe according to the present invention can bevertically attached to the space expander of the probe card withhighly-density, it is possible to cope with the fine pitch of the highlyintegrated semiconductor element.

Furthermore, since the microprobe according to the present inventioncomes in contact with the ball type electrode pad widely used in recentyears, that is, the ball type electrode pad of which the top surface isprotruded upwardly, in the form of surrounding the ball type electrodepad, it is possible to increase an area in which the end of themicroprobe comes in contact with the ball type electrode pad, and thusto prevent the end of the microprobe from sliding on the ball typeelectrode pad, thereby facilitating its use.

In addition, since the hollow microprobe according to the presentinvention makes it possible to mass-produce reproducible product usingthe MEMS technique, it is possible to solve the problems such as thelack of reproducibility, no-unification of standards or the like.

Although the present invention has been described in detail inconnection with the preferred embodiments, the preferred embodiments areintended not to limit the present invention but to exemplify best modesof the present invention. It will be understood by those skilled in theart that various changes or modifications may be made thereto withoutdeparting from the spirit and scope of the present invention. Therefore,the present invention is defined only by the appended claims whichshould be construed as covering such changes or modifications.

1. A method of manufacturing a hollow microprobe using an MEMStechnique, comprising: a step of forming a through hole 14 in asubstrate 10; a step of forming a buried conductor 18 in the throughhole 14; a step of planarizing a surface of the substrate 10 providedwith the buried conductor 18; a step of forming a base conductive film20 on the substrate 10; a step of forming a first tip supporter 22,which has a oblique surface sloping down, on the substrate 10 providedwith the base conductive film 20; a step of rounding the top surface ofthe first tip supporter 22 by eroding angled portions of the top surfaceof the first tip supporter 22; a step of forming a second tip supporter24 on an outer surface of the first tip supporter 22 to allow the topsurface of the first tip supporter 22 to be opened; a step of forming atip 26 on the outer surface of the second tip supporter 24; and a stepof removing a part of the top surface of the first tip supporter 22opened by the second tip supporter and the tip by a predetermined depth.2. A method of manufacturing a hollow microprobe using an MEMS techniqueaccording to claim 1, further comprising a step of forming a protectionfilm pattern 12 on the substrate 10, before the step of forming thethrough hole.
 3. A method of manufacturing a hollow microprobe using anMEMS technique according to claim 2, wherein the protection film patternhas a thickness of 10±2 μm.
 4. A method of manufacturing a hollowmicroprobe using an MEMS technique according to claim 2, wherein in thestep of forming the through hole, the through hole is formed by punchingthe substrate 10 using the protection film pattern 12 as a mask in areactive ion etching (RIE) process.
 5. A method of manufacturing ahollow microprobe using an MEMS technique according to claim 1, whereinin the step of forming the through hole, the through hole is formed byapplying a laser beam to the substrate 10 from an upside of thesubstrate to punch the substrate
 10. 6. A method of manufacturing ahollow microprobe using an MEMS technique according to claim 1, whereinthe substrate is made of either silicon or glass.
 7. A method ofmanufacturing a hollow microprobe using an MEMS technique according toclaim 1, further comprising a step of forming a seed layer on an innersurface of the through hole and a top surface of the substrate, beforethe step of forming the buried conductor.
 8. A method of manufacturing ahollow microprobe using an MEMS technique according to claim 7, whereinthe seed layer is formed using a sputtering process.
 9. A method ofmanufacturing a hollow microprobe using an MEMS technique according toclaim 7, wherein the seed layer is made of copper (Cu).
 10. A method ofmanufacturing a hollow microprobe using an MEMS technique according toclaim 7, wherein the seed layer is made of chrome (Cr).
 11. A method ofmanufacturing a hollow microprobe using an MEMS technique according toclaim 7, further comprising a step of removing the seed layer and theprotection film pattern on the substrate, so that the seed layer remainsonly on the inner wall of the though hole.
 12. A method of manufacturinga hollow microprobe using an MEMS technique according to claim 11,wherein the step of removing the seed layer and the protection filmpattern is carried out using a wet etching process.
 13. A method ofmanufacturing a hollow microprobe using an MEMS technique according toclaim 1, wherein the buried conductor is formed by performing anelectroplating process using the seed layer.
 14. A method ofmanufacturing a hollow microprobe using an MEMS technique according toclaim 1, wherein the buried conductor is formed by performing anelectroplating process using an electroplating pad.
 15. A method ofmanufacturing a hollow microprobe using an MEMS technique according toclaim 14, wherein the electroplating pad is coupled to the substrateusing a jig.
 16. A method of manufacturing a hollow microprobe using anMEMS technique according to claim 1, wherein the buried conductor ismade of nickel (Ni).
 17. A method of manufacturing a hollow microprobeusing an MEMS technique according to claim 1, wherein the step ofplanarzing the surface of the substrate is performed using a chemicalmechanical polishing (CMP) process.
 18. A method of manufacturing ahollow microprobe using an MEMS technique, according to the claim 1,wherein the step of forming the base conductive film is carried outusing a physical deposition process.
 19. A method of manufacturing ahollow microprobe using an MEMS technique according to claim 1, whereinthe base conductive film is made of aluminum (Al).
 20. A method ofmanufacturing a hollow microprobe using an MEMS technique according toclaim 1, wherein in the step of forming the first tip supporter, thefirst tip supporter is formed by coating photo-resist on the substratewith a predetermined thickness and obliquely exposing the photo-resistby means of a three dimensional mirror reflected parallel beamilluminator (MRPBI).
 21. A method of manufacturing a hollow microprobeusing an MEMS technique according to claim 1, wherein the step ofrounding the top surface of the first tip supporter is carried out usinga plasma including oxygen (O₂) gas.
 22. A method of manufacturing ahollow microprobe using an MEMS technique according to claim 1, whereinthe step of forming the second tip supporter is carried out using a lowpressure chemical vapor deposition (LPCVD) process.
 23. A method ofmanufacturing a hollow microprobe using an MEMS technique according toclaim 1, wherein the step of forming the second tip supporter is carriedout using a plasma enhanced chemical vapor deposition (PECVD) process.24. A method of manufacturing a hollow microprobe using an MEMStechnique according to claim 1, wherein the second tip supporter is madeof a nitride film (Si₃N₄).
 25. A method of manufacturing a hollowmicroprobe using an MEMS technique according to claim 1, wherein thesecond tip supporter has a thickness of 1 to 20 μm.
 26. A method ofmanufacturing a hollow microprobe using an MEMS technique according toclaim 1, wherein in the step of forming the tip, the conductive film isformed using a metal organic chemical vapor deposition (MOCVD) process.27. A method of manufacturing a hollow microprobe using an MEMStechnique according to claim 1, wherein in the step of forming the tip,a conductive film is formed using a sputtering process.
 28. A method ofmanufacturing a hollow microprobe using an MEMS technique according toclaim 1, wherein a predetermined part of the tip is removed using aphotolithography process.
 29. A method of manufacturing a hollowmicroprobe using an MEMS technique according to claim 1, wherein the tipis made of any one of chrome (Cr), nickel (Ni), and tungsten (W).
 30. Amethod of manufacturing a hollow microprobe using an MEMS techniqueaccording to claim 1, wherein the tip has a thickness of 10 to 30 μm.31. A method of manufacturing a hollow microprobe using an MEMStechnique according to claim 1, wherein the step of removing a part ofthe first tip supporter is carried out by use of an ashing process usingoxygen (O₂) gas.
 32. A hollow microprobe using an MEMS technique,comprising: a substrate in which a through hole having a predeterminedsize is formed on a defined portion; a buried conductor filling in thethrough hole; a base conductive film formed on the substrate in whichthe through hole is filled with the buried conductor; a first tipsupporter formed on the base conductive film and having a obliquesurface sloping down, its top surface being rounded into a curvedsurface; a second tip supporter being formed on an outer surface of thefirst tip supporter, allowing the top surface of the first tip supporterto be opened, and being protruded from the top of the first tipsupporter; and a conductive tip being formed on an outer surface of thesecond tip supporter and allowing the top surface of the first tipsupporter to be opened.
 33. A hollow microprobe using an MEMS techniqueaccording to claim 32, wherein the buried conductor 18 is made of nickel(Ni).
 34. A hollow microprobe using an MEMS technique according to claim32, wherein the tip 26 is made of any one of chrome (Cr), nickel (Ni),and tungsten (W).
 35. A hollow microprobe using an MEMS techniqueaccording to claim 32, wherein the substrate 10 is made of silicon orglass.
 36. A hollow microprobe using an MEMS technique according toclaim 32, wherein the second tip supporter has a thickness of 1 to 20μm.
 37. A hollow microprobe using an MEMS technique according to claim32, wherein the conductive film has a thickness of 10 to 30 μm.